Study of the Temperature Dependence Model Parameters on NMOSFET in BSIM3V3

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Published: Dec 28, 2020
Keywords:
temperature dependence model NMOSFET threshold voltage parasitic series resistance

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Anucha Ruangphanit
Thai-Micro Electronics Center, National Science and Technology Development Agency, Khlong Luang, Pathum Thani 12120, Thailand
Rangson Muanghlua
Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang Bangkok, 10520 Thailand

Abstract

This article describes the study of the temperature dependence model parameters on NMOSFET in BSIM3V3. The testing MOSFET at the size of W/L=20/20, 20/1.2, 20/0.8, and 20/ 0. 7 have been designed. The IDS - VGS and IDS - VGS characteristics at the temperature of 27, 55, 85, and 125 °C are measured. The threshold voltage was performing by the linear extrapolation methodology. The electrical characteristics such as threshold voltage, mobility, off-state leakage current, saturation current, and parasitic series S/D resistance are extracted and discussed. Finally, the temperature modeling parameters in BSIM3 level are proposed also.

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How to Cite
1.
Ruangphanit A, Muanghlua R. Study of the Temperature Dependence Model Parameters on NMOSFET in BSIM3V3. Thai J. Nanosci. Nanotechnol. [Internet]. 2020 Dec. 28 [cited 2024 Nov. 24];5(2):8-15. Available from: https://ph05.tci-thaijo.org/index.php/TJNN/article/view/70
Issue
Vol. 5 No. 2 (2020): TJNN
Section
Research Articles
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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

References

William NC, Jack PM. MOS/LSI Design and application. USA: McGraw Hill; c1972. Chapter 3, Reliability Aspects of MOS Integrated Circuits; p. 84–5.

Danieal F. MOSFET Modelling with SPICE principles and practice. Newjersy: Prentive Hall PTR; 1997. p. 400-1.

Weidong L, Xiaodong J, James C, Min C, Zhihong L, Yuhua C, et al. BSIM3v3.2.2 MOSFET model user’ manual. Berekely: University of California; 1999.

Narain A. MOSFET Modelling for VLSI Simulation theory and practice. Singapore: World Scientific Publishing; 2007. p. 58-60.

Guiseppe M, Paolo A. Semiconductor devices modelling with SPICE. NY: Mcgraw Hill; 1993. p. 1-42.

Guiseppe M, Paolo A. Semiconductor devices modelling with SPICE. NY: Mcgraw Hill; 1993. p. 411-44.

Tsividis Y. Operation and modelling of the MOS transistor. Singapore: Mcgraw Hill, 1988.

Kiddee K, Ruangphanit A, Niemcharoen S, Atiwongsangthong N, Muanghlua R. Extraction of mobility degradation effective channel length and total series resistance of NMOS at elevate temperature. The 8th Electrical Engineering/ Electronics, Computer, Telecommunications and Information Technology; 2011 May 17-19; Khon Kaen, Thailand. Khon kean: IEEE. p. 2-6.

Schroder DK. Semiconductor Material and Device Characteristics. NY: John Wiley & Son; 1990. P. 183-5.