Properties of Al Doped ZnO Thin Film Prepared by Simple Casting Process

Article Sidebar

PDF
Published: Jun 29, 2018
Keywords:
Zinc Oxide Al dopant Thin Film

Main Article Content

M. Pochai
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
P. Songkeaw
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
K. Onlaor
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
T. Thiwawong
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
B. Tunhoo
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand

Abstract

Aluminum doped zinc oxide (AZO) thin films were prepared by a simple doctor blade technique. A solution of zinc acetate mixed with aluminum chloride was used as precursor, which was casted on the glass substrate. The influences of annealing temperature on properties of the films were evaluated by X-ray diffraction, scanning electron microscope, UV-visible spectrophotometer and four point probe technique. The electrical conductivity and optical energy band gap of AZO films had been increased when Al concentration increased, due to the effect of the atom of Al dopant in the ZnO films.

Article Details

How to Cite
1.
Pochai M, Songkeaw P, Onlaor K, Thiwawong T, Tunhoo B. Properties of Al Doped ZnO Thin Film Prepared by Simple Casting Process. Thai J. Nanosci. Nanotechnol. [Internet]. 2018 Jun. 29 [cited 2024 Dec. 27];3(1):10-6. Available from: https://ph05.tci-thaijo.org/index.php/TJNN/article/view/49
Issue
Vol. 3 No. 1 (2018): TJNN
Section
Research Articles
Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

References

A. K. Radzimska, T. Jesionowski, “Zinc-Oxide-From Synthesis to Application: A Review”, Materials, 7 (2014) 2833-2881.

Z. L. Wang, “Zinc Oxide nanostructures: growth, properties and applications”, J.

Phys.: Condens. Matter. 16 (2014) R829-R858.

N. Chaithanatkun, D. Chantarawong, P. Songkaew, K. Onlaor, T. Thiwawong and B. Tunhoo, Electrical Bistable Properties of ZnO Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Technique, Proc. of the 10th IEEE Int. Conf. on Nano/Micro Eng. and Mol. Sys. (IEEE-NEMS 2015) Xi’an, China, April 7-11, 2015.

B.P. Shantheyanda, V.O. Todi, K.B. Sundaram, “Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering”, J. Vac. Sci. Technol. A 29 (2011) 5.

M. Wang, K Eun Lee, S Hong Han, et. al., “Optical and photoluminescent properties of sol-gel Al-doped ZnO thin films”, Mater. Lett. 61 (2007) 1118.

S. Yun, S. Lim, “Improved conversion efficiency in dye-sensitized solar cells based on electrospun Al-doped ZnO nanofiber electrodes prepared by seed layer treatment”,

J. Solid State Chem. 184 (2011) 273.

J. Wang, Y. Li, Y. Kong, et. al., “Non-fluorinated superhydrophobic and micro/nRano hierarchical Al doped ZnO film: the effect of Al doping on morphological and hydrophobic properties”, RSC adv. 5 (2015) 81024.

F. Maldonado, A. Stashans, “Al-doped ZnO: Electronic, electrical and structural properties”, J Phys Chem Solids 71 (2010) 784.

Y. S. Kim, W.P. Tai, “Electrical and optical properties of Al-doped ZnO thin films by sol–gel process”, Appl. Sur. Sci. 253 (2007) 4911-4916.

A. Ghosh, N. Kumari1, S. Tewari, and A. Bhattacharjee, “Structural and optical properties of pure and Al doped ZnO nanocrystals”, Indian J. Phys. 87 (2013) 10991104.