Properties of Al Doped ZnO Thin Film Prepared by Simple Casting Process

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Published: Jun 29, 2018
Keywords:
Zinc Oxide Al dopant Thin Film

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M. Pochai
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
P. Songkeaw
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
K. Onlaor
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
T. Thiwawong
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
B. Tunhoo
Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand

Abstract

Aluminum doped zinc oxide (AZO) thin films were prepared by a simple doctor blade technique. A solution of zinc acetate mixed with aluminum chloride was used as precursor, which was casted on the glass substrate. The influences of annealing temperature on properties of the films were evaluated by X-ray diffraction, scanning electron microscope, UV-visible spectrophotometer and four point probe technique. The electrical conductivity and optical energy band gap of AZO films had been increased when Al concentration increased, due to the effect of the atom of Al dopant in the ZnO films.

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How to Cite
1.
Pochai M, Songkeaw P, Onlaor K, Thiwawong T, Tunhoo B. Properties of Al Doped ZnO Thin Film Prepared by Simple Casting Process. Thai J. Nanosci. Nanotechnol. [Internet]. 2018 Jun. 29 [cited 2024 Nov. 24];3(1):10-6. Available from: https://ph05.tci-thaijo.org/index.php/TJNN/article/view/49
Issue
Vol. 3 No. 1 (2018): TJNN
Section
Research Articles
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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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